In this very brief video, we will list several professional compact models. We will mention very briefly several compact models that are widely used. There are many features in each model and I will only mention a few of them. But practically, all of the effects that we have been discussing in this class are modeled by these advanced compact models. I will not make any attempt to compare these models. That's very difficult to do. Perhaps, you might care to do that using the benchmark tests that I will show you in the next video. And I should emphasize that the model list that I will present is not exhaustive. There are other excellent efforts in modeling. There are some reference to such models in the book. The first model is BSIM3 and BSIM4. these are the most widely used models in the industry. BSIM stands for Berkeley Short-Channel IGFET model. IGFET is an alternative acronym for MOSFET, it stands for Insulated Gate Field Effect Transistor. This model is threshold-based, source-referenced, and it uses interpolation between strong and weak inversion. It has, in BSIM4, there is improved small dimension effects modeling. For example, gate tunneling current STI and well-proximity, effects we haven't covered yet. Mechanical stress which we will mention later, and so on. Another model is EKV, EKV stand for Enz-Krummenacher-Vittoz who were the developers at CSEM and EPFL in Switzerland. This is a charge-based model, it is largely equivalent to a surface-based model, you can look up the corresponding material in the book. It is based on channel charges linearization. It's completely symmetric and it is body-referenced. And there's a single companion model for hand analysis that goes with EKV model. Then, there is an upcoming model, BSIM6. It has not been released at the time I am recording this lecture. It is a collaboration between BSIM and EKV. It is charge-based, it's symmetric, body referenced and, of course, the hopes the hopes are high that this kind of collaboration will lead to a very advanced model. Then there is the PSP model. This is a collaboration between the group of Professor Gildenblat at Arizona State and Philips. It's a surface potential-based model, symmetric and body referenced. And they use the symmetric linearization of surface potential, which was one of the simplifications of the all region models that we have covered a couple of weeks ago. The surface potential formulation is extended to accumulation and also to the extrinsic regions of the transistor. And there is a very efficent solution for the surface potential, calimed to be with ten picovolts of accuracey, that goes with this model. The surface potential formulation allows evaluation of capacitances even in the pinchoff region. And there is Advanced mobility and velocity saturation modeling, Large-signal Norm Quasi Static Modeling, and Advanced junction modeling as well. Finally, we have the HiSIM model. This has been led by Professor Miura-Mattausch at Hiroshima University in Japan. It is surface potential-based, symmetric and body referenced, and it has an efficient efficient iterative solution for surface potential, again, 10 pV of accuracy. And the surface potential allows evaluation of capacitances even in the pinchoff region. all of these pieces of information related to the capacitances will make more sense once we do discuss the small signal capacitances later on in this course. For more information on Compact Models such as the ones I mentioned, please see the Compact Model Council website, and reference is given in Chapter 10 of the book. In this video, I have presented a few of the physical compact models in use today. In the next and final video in this series, I will discuss benchmark tests for models.