Informações sobre o curso
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Aprox. 9 horas para completar

Sugerido: 3 weeks of study, 2-5 hours per week....

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100% online

Comece imediatamente e aprenda em seu próprio cronograma.

Prazos flexíveis

Redefinir os prazos de acordo com sua programação.

Nível avançado

Aprox. 9 horas para completar

Sugerido: 3 weeks of study, 2-5 hours per week....

Inglês

Legendas: Inglês

Programa - O que você aprenderá com este curso

Semana
1
4 horas para concluir

Metal-Oxide-Semiconductor (MOS) Device

In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS....
8 vídeos (total de (Total 90 mín.) min), 2 leituras, 1 teste
8 videos
MOS at Equilibrium10min
Basic Operation of MOS13min
Analysis of MOS Operation9min
Analysis of MOS Operation (Part 2)10min
MOS in Non-Equilibrium15min
Capacitance-Voltage Characteristics13min
Non-Ideal MOS14min
2 leituras
Module Topics2min
Materials and Constants10min
1 exercício prático
Homework #1s
Semana
2
3 horas para concluir

MOS Field Effect Transistor (MOSFET)

In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length....
7 vídeos (total de (Total 65 mín.) min), 2 leituras, 1 teste
7 videos
Basic Operation of MOSFET12min
Advanced Operation of MOSFET 19min
Advanced Operation of MOSFET 28min
Short Channel Effects 18min
Short Channel Effects 212min
Short Channel MOSFET5min
2 leituras
Module Topics2min
Materials and Constants10min
1 exercício prático
Homework #2s
Semana
3
5 horas para concluir

Bipolar Junction Transistor (BJT)

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant....
6 vídeos (total de (Total 79 mín.) min), 2 leituras, 2 testes
6 videos
Base-Emitter Current12min
Basic Operation of BJT9min
Heterojunction Bipolar Transistor (HBT)16min
Non-Ideal Behavior13min
Frequency Response10min
2 leituras
Module Topics2min
Materials and Constants10min
1 exercício prático
Homework #3s

Instrutores

Avatar

Wounjhang Park

Professor
Electrical, Computer, and Energy Engineering

Sobre Universidade do Colorado em Boulder

CU-Boulder is a dynamic community of scholars and learners on one of the most spectacular college campuses in the country. As one of 34 U.S. public institutions in the prestigious Association of American Universities (AAU), we have a proud tradition of academic excellence, with five Nobel laureates and more than 50 members of prestigious academic academies....

Sobre o Programa de cursos integrados Semiconductor Devices

This Semiconductor Devices specialization is designed to be a deep dive into the fundamentals of the electronic devices that form the backbone of our current integrated circuits technology. You will gain valuable experience in semiconductor physics, pn junctions, metal-semiconductor contacts, bipolar junction transistors, metal-oxide-semiconductor (MOS) devices, and MOS field effect transistors. Specialization Learning Outcomes: *Learn fundamental mechanisms of electrical conduction in semiconductors *Understand operating principles of basic electronic devices including pn junction, metal-semiconductor contact, bipolar junction transistors and field effect transistors *Analyze and evaluate the performance of basic electronic devices *Prepare for further analysis of electronic and photonic devices based on semiconductors...
Semiconductor Devices

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